1. Home
  2. agenda
  3. Near-Infrared Photoluminescent Paramagnetic Defects with Spin S
Contacts
anne.chauvet [at] u-psud.fr (Anne Chauvet)
Documents
Soutenance_these_LAC_S_Abbasi-Zargaleh.pdf

Near-Infrared Photoluminescent Paramagnetic Defects with Spin S

Soroush ABBASI ZARGALEH, from Aimé Cotton Laboratory, will do the doctoral thesis defence about "Low Temperature Photoluminescence Excitation Spectroscopy and Optically Detected Magnetic Resonance of Near-Infrared Photoluminescent Paramagnetic Defects with Spin S = 1 in Silicon Carbide”, on the 12th july.
Le 12/07/2017 : 14:30 à 16:30
Ajouter à mon agenda 2025-05-12 21:30:20 2025-05-12 21:30:20 Near-Infrared Photoluminescent Paramagnetic Defects with Spin S Soroush ABBASI ZARGALEH, from Aimé Cotton Laboratory, will do the doctoral thesis defence about "Low Temperature Photoluminescence Excitation Spectroscopy and Optically Detected Magnetic Resonance of Near-Infrared Photoluminescent Paramagnetic Defects with Spin S = 1 in Silicon Carbide”, on the 12th july. Aimé Cotton Laboratory - Balmer Room ENS-PARIS-SACLAY webmaster@ens-paris-saclay.fr Europe/Paris public

Point-like defects in wide-bandgap materials are attracting intensive research attention owing to prospective applications in quantum technologies. Inspired by the achievements obtained with the NV– center in diamond for which qubit and nanoscale quantum sensors have been demonstrated, the search for high spin color centers with similar magneto-optical properties in a more technological mature material such as silicon carbide (SiC) had a renewed interest.

Indeed, SiC exhibits polymorphism, existing for instance with cubic (3C polytype) or hexagonal (4H and 6H polytypes) crystalline structures. Such property provides a degree of freedom for engineering a rich assortment of intrinsic and extrinsic atomic-like deep defects.

In this thesis using photoluminescence excitation spectroscopy at cryogenic temperature and a comparison to ab initio calculations I have evidence for the first time the presence of optically active nitrogen-vacancy spin S=1 (NCVSi) defect in 4H-SiC.

Further investigation, I have also developed a setup that allowed me to detect optically the S=1 spin magnetic resonance (ODMR) of the divacancy (VCVSi) in 3C-SiC at cryogenic temperature, and study its hyperfine interaction with nearby carbon and silicon nuclear spins.

 

Print page